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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=20 ZVP3310A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -100 -140 -1.2 20 UNIT V mA A V mW C 625 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -300 20 50 50 15 5 8 8 8 8 -100 -1.5 -3.5 20 -1 -50 MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-100V, VGS=0 VDS=-80V, VGS=0V, T=125C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-150mA VDS=-25V,ID=-150mA mA Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-432 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3310A TYPICAL CHARACTERISTICS VGS=-20V -16V -12V VGS= -20V -16V -14V -12V -10V -9V -8V -7V -0.2 -6V -5V 0 -2 -4 -6 -8 -4V -10 ID - Drain Current (Amps) -0.6 -0.6 -9V -0.4 -8V -7V -6V ID - Drain Current (Amps) -10V -0.4 -0.2 -5V -4.5V -4V -3.5V 0 -10 -20 -30 -40 -50 0 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics -10 VDS-Drain Source Voltage (Volts) ID - Drain Current (Amps) -0.6 -8 -6 ID= -0.3A -0.15A -0.075A 0 0 -2 -4 -6 -8 -10 -0.4 VDS= -10V -4 -0.2 -2 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () -6V -7V -8V -10V Transfer Characteristics VGS=-4V 100 -5V 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 VGS=-10V ID=-150mA 50 -20V VGS=VDS ain Dr ID=-1mA Gate Thresh old Voltage VGS(TH) 20 40 60 80 100 120 140 160 180 t sis Re ce ur So R ce an n) (o DS 10 -10 -100 -1000 ID-Drain Current (mA) Tj-Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) v Temperature 3-433 ZVP3310A TYPICAL CHARACTERISTICS 100 100 gfs-Transconductance (mS) 90 80 70 60 50 40 30 20 10 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 VDS=-10V gfs-Transconductance (mS) 90 80 70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VDS=-10V ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 50 40 30 20 10 0 0 -10 -20 -30 -40 -50 -60 VGS=0V f=1MHz VGS-Gate Source Voltage (Volts) 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VDS= -25V -50V -100V ID=- 0.2A C-Capacitance (pF) Ciss Coss Crss -70 -80 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-434 |
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